发明名称 METHOD OF FORMING SEMICONDUCTOR LAYER OF SOLID ELECTROLYTIC CAPACITOR
摘要 A solid electrolytic capacitor, and a method of manufacturing the same, includes a capacitor element which comprises a metal plate capable of having a dielectric oxidation layer formed thereon, a dielectric oxidation layer formed on a surface of the metal plate, a polymer layer of a heterocyclic compound formed on the dielectric oxidation layer, a conductive layer formed on the polymer layer, wherein the polymer layer near a defect interface of the dielectric oxidation layer is converted into an insulator, and terminals provided on respective ones of the metal plate and conductive layer.
申请公布号 JPS63181308(A) 申请公布日期 1988.07.26
申请号 JP19870012207 申请日期 1987.01.23
申请人 NITSUKO CORP 发明人 HARAKAWA YOSHIHIRO;TAMAMITSU KENJI
分类号 H01G9/028;H01G9/00;H01G9/02;H01G9/025 主分类号 H01G9/028
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