| 摘要 |
PURPOSE:To inject efficiently an electric current into a groove part by forming a semiconductor multilayer film consisting of two clad layers, an active layer as well as a cap layer as a top one on a semiconductor substrate having two parallel protruding parts by interposing a groove having a prescribed form between the above protruding parts and by forming the groove in a cap layer that is parallel to the groove on the substrate and is located right above the substrate, thereby forming a zinc diffusion region in the cap and the second clad layers. CONSTITUTION:Two parallel ridges are formed on an N-type GaAs substrate 1 by interposing a groove between two ridges. The first clad layer 3 composed of an N-type GaAlAs layer as the first layer, an active layer 4 composed of non-doped GaAs layer as the second layer, the second clad layer 5 composed of P-type GaAlAs layer as the third layer, a cap layer 6 composed of an N-type GaAs layer as the fourth layer grow in sequence on the ridges continuously. After a V-shaped groove 10 is formed at the cap layer 6 of the fourth layer located right above this groove, zinc is diffused on the whole plane of this layer and a zinc diffused region 7 is formed. After that, a P-side ohmic electrode 9 and an N-side ohmic electrode 10 are formed. A prepared wafer is cloven and a laser element is obtained.
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