发明名称 Nonvolatile semiconductor memory device
摘要 Each of the memory cells forming a nonvolatile RAM comprises one floating-gate transistor and one capacitor. When the power source is turned on, storage of information is performed according to the amount of electric charge stored in each capacitor. When the power source is turned off, nonvolatile storage of information is performed according to the level of the threshold voltage of each floating-gate transistor.
申请公布号 US4760556(A) 申请公布日期 1988.07.26
申请号 US19860911431 申请日期 1986.09.25
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 DEGUCHI, MIKIO;FUJISHIMA, KAZUYASU;TERADA, YASUSHI
分类号 G11C17/00;G11C11/404;G11C14/00;G11C16/04;(IPC1-7):G11C11/40 主分类号 G11C17/00
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