发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
Each of the memory cells forming a nonvolatile RAM comprises one floating-gate transistor and one capacitor. When the power source is turned on, storage of information is performed according to the amount of electric charge stored in each capacitor. When the power source is turned off, nonvolatile storage of information is performed according to the level of the threshold voltage of each floating-gate transistor.
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申请公布号 |
US4760556(A) |
申请公布日期 |
1988.07.26 |
申请号 |
US19860911431 |
申请日期 |
1986.09.25 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
DEGUCHI, MIKIO;FUJISHIMA, KAZUYASU;TERADA, YASUSHI |
分类号 |
G11C17/00;G11C11/404;G11C14/00;G11C16/04;(IPC1-7):G11C11/40 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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