| 摘要 |
PURPOSE:To obtain a line image sensor with good resolution and high reliability by a method wherein a first layer and a second layer, both being island-shaped, are formed by depositing an ITO as a transparent electrode and a transparent protective film in succession and a part to be connected to the ITO of the first layer is covered with the second layer. CONSTITUTION:After an i-layer 3', a P-layer 8', both being composed of an a-Si:H film, and an ITO electrode 4' have been formed in succession, a protective film 5' composed of SiN4 is formed on the assembly by the glow-discharge dissolution using SiH4, NH3 and N2 by a plasma CVD method, an NiCr layer 11 and an Au layer 12 are formed in succession on the front end of a lower electrode 2'' in such a way that its rear end part is connected to the ITO electrode 4'. After a bonding pad has been formed by a photo-etching method, the bonding pad and an integrated element 13 for scanning use are connected by wire bonding 14, and a line image sensor is obtained. The resolution of this line image sensor is good even when the protective film 5' composed of SiN4 or the like is formed. |
