| 摘要 |
PURPOSE:To obtain a sufficient operational margin even by dividing finely and to make the compact integration without degrading the performance by controlling the storage of the charges to the floating gate of a transistor and storing a bit of information by the changes in the threshold voltage of a control gate. CONSTITUTION:In a MOS semiconductor memory, a memory cell consists of a first MOS transistor 10a having the floating gate 6 and the control gate and a second MOS transistor 10b connected to the floating gate 6 so as to store the information by changing the threshold voltage at the control gate by controlling the storage of the electric charge on the floating gate 6 by means of the second MOS transistor 10b, thus providing the sufficiently large operational margin even by dividing finely. As a result, the compact integration is realized without degrading the performance and the titled semiconductor memory having bits of >=4M is obtained.
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