| 摘要 |
PURPOSE:To prevent the generation of a defective ohmic contact by forming an silicide film onto single crystal or polycrystalline Si, coating the surface with a protective film and activating and treating the whole. CONSTITUTION:An opening is bored to an SiO2 film 4 on an n-type Si substrate 1 to which a p-type resistance region 2 is shaped, a poly-Si film 5 and a WSix film 6 are superposed, and B ions are implanted and the concentration of B ions is maximized on the interface between the films 5, 6. The film 6 is covered with a CVDSiO2 film 8, and an impurity in the poly Si film 5 is activated through predetermined heat treatment. The impurity introduced into poly Si 5 is moved only by a diffusion into WSix 6 in the presence of the SiO2 film, impurity concentration on the interface does not lower largely, and the silicide film and Si are brought into contact in an ohmic manner. The SiO2 film 8 is removed, and an Al electrode is annexed, thus completing a semiconductor device.
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