| 摘要 |
PURPOSE:To obtain a photosensitive body having excellent electric chargeability, low residual potential and excellent environmental resistance by constituting a barrier layer by alternately laminating thin amorphous silicon films contg. an element to govern a conduction type, thin microcrystalline silicon films, thin semiconductor films mainly consisting of boron and nitrogen. CONSTITUTION:The barrier layer 2 of the electrophotographic sensitive body having a conductive base 1, the barrier layer 2 and a photoconductive layer 3 is constituted by alternately laminating the thin amorphous silicon films contg. the element to govern the conduction type, the thin microcrystalline silicon films and the thin semiconductor films mainly consisting of boron and nitrogen and the film thicknesses of the respective thin films are specified to 30-200Angstrom . The element to govern the conduction type is, for example, elements belonging to group III or V periodic table and the content of asid elements is specified preferably to 10<-3>-1atom.%, more preferably to 10<-2>-10<-1>atom.%. The running performance of a carrier is thereby enhanced and the electrophotographic sensitive body having the excellent electric charge characteristics on account of high resistance is obtd. |
