| 摘要 |
PURPOSE:To mass-produce a sensor having specified performance by joining an silicon substrate and a baseplate to which a through-hole is bored, polishing the silicon substrate to a predetermined thickness and forming a piezoresistance element at the prescribed position of the silicon substrate. CONSTITUTION:An silicon substrate 21, to which an epitaxial layer 22 is grown and which consists of single crystal silicon, and a baseplate 24, to which through-holes 26, 27 are bored and an insulating film 25 are shaped and which is composed of single crystal silicon, are joined while the layer 22 and the insulating film 25 are faced oppositely. The substrate 21 is removed through polishing, and the thickness of a diaphragm 30 shaped by the layer 22 is polished to predetermined size. Gages 31, 32, resistance values of which change by applying measuring pressure, are formed to the surface of the layer 22 or near the surface of the layer 22 through ion implantation, etc. The gages 31, 32 are divided into baseplates 33, 34, etc., and used as pressure sensors 35, 36. Accordingly, semiconductor pressure sensors having specified performance can be mass-produced.
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