PRESSURE CONTACT TYPE SEMICONDUCTOR DEVICE

摘要

PURPOSE:To improve the current capacity and thermal resistance of the titled device remarkably by a method wherein a sintered silver plate and a contact plate with thermal expansion coefficient almost equivalent to that of a semiconductor substrate into several separated pieces and an upper connecting electrode. CONSTITUTION:In other to make a main electrode 2 and a contact plate 8 come into even and perfect contact with each other, a sintered silver plate 9 is inserted to extreme plasticity and deformation as well as easy collapsibility by pressurization and high conductivity to be filled in the gap between the main electrode 2 and the contact plate 8. Within a pressure contact type semiconductor device subject to such a constitution, the gap between the main electrode 2 and the contact plate 8 may be filled with this collapsed silver making them come into perfect contact with each other since the properly soft sintered silver plate 9 with appropriate porosity provided is to be easily collapsed and spread. The requirements to be met by the sintered silver plate 9 may be e.g. porosity of 10-40% and thickness of 0.2-0.7mm..