| 摘要 |
PURPOSE:To obtain an excellent resist pattern by treating a lower layer resist by a developer, into which a liquid having solubility to an upper layer resist is mixed, when an upper-layer resist pattern is transferred to the lower layer resist. CONSTITUTION:When an ultraviolet beam positive type resist 23 is applied onto a foundation film to be etched 22 with a stepped section 21 and flattened and a resist 24 is superposed, a mixed layer 25 is formed on the interface. The upper layer resist 24 is patterned, the whole surface is irradiated with far ultraviolet rays 26 as the mixed layer 25 in an exposed section is left as it is, and a lower layer resist 23 in a section in which there is no upper layer resist 24 is exposed. When the layer 23 is treated with the developer of the lower layer resist 23 into which a liquid having solubility to the upper layer resist 24 is mixed, the mixed layer 25 is also removed, and the pattern of the upper layer resist 24 is transferred to the lower layer resist, thus completing an etching mask for the foundation film 22. According to the method, an excellent resist pattern can be shaped without O2 plasma treatment. |
