| 摘要 |
PURPOSE:To form high quality GaN by the vapor phase epitaxy on a saphire substrate by previously forming a surface nitride layer on the saphire substrate completing the heat processing in the raw material gas ambience including nitrogen. CONSTITUTION:A saphire substrate 1 is put on a carbon susceptor 2 of a quartz reaction tube 3, the susceptor is heated up to about 1100 deg.C under the high vacuum condition and NH3 is caused to flow. The N atoms diffuse into Al2O31, the O atoms diffuse from Al2O3 and thereby the surface nitride layer which continuously changes its composition from Al2O3 to AlN can be formed. Next, the susceptor is kept at the growth temperature of about 900 deg.C, trymethylgallium is introduced and the GaN single crystal film is grown under the pressure condition of about 0.1 atmospheric pressure. Thereby, high quality film with less relocation can be obtained. For the raw material gas including Ga, the organic Ga compound or Ga halogenide is effective and for the gas including N, NH3, N2H4 are effective.
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