| 摘要 |
PURPOSE:To obtain a method for manufacturing a self-aligned planar-type HBT which can be miniaturized and integrated by a method wherein, after an external base region and a base electrode metal have been formed in a self-aligned manner and an emitter-contact layer has been aligned, an emitter electrode is formed in a selfaligned manner or the like. CONSTITUTION:A subcollector layer 1b, a collector layer 1c, a base layer 1d, an emitter layer 1e and an emitter-contact layer 1f are formed in succession on a semiconductor substrate 1a; a pattern of an emitter is formed on a first insulating film 2 formed on the assembly; in addition, a side-wall insulating film 3a is formed. Then, after an external base region 7 has been formed by ion implantation or impurity diffusion by making use of the insulating films 2, 3a as a mask, a base electrode metal 4 is formed on it. Then, after a third insulating film 3b for coating a base electrode and a resist 5 have been deposited, the emitter-contact layer 1f is aligned by etching; if necessary, after impurities have been introduced into the emitter-contact layer 1f or the like, an emitter electrode 6 is formed on the aligned emitter-contact layer 1f.
|
