| 摘要 |
PURPOSE:To obtain a semiconductor laser device which can deflect and scan a radiating laser beam at high speed without the need for a mechanical and external driving system by a method wherein a light-guide region formed by being linked with an active region inside an active layer in the radiating direction of the laser beam and a control electrode to partially inject a carrier into the light-guide region are formed. CONSTITUTION:At a semiconductor laser device where a lower clad layer 2, an active layer 3 and an upper clad layer 4 are deposited in succession on a semiconductor substrate 1, the following are formed: a light-guide region 5 which is formed by being linked with an active region 3a inside the active layer 3 and whose energy gap is bigger than that of the active region 3a; control electrodes 8-10 which are used to inject a carrier into the light-guide region 5 partially. For example, if biases V8-V10 to be applied to the control electrodes 8-10 are set to appropriate values of V8>V9>V10, a beam of light whose phase is uniform up to the active region 3a is phase-modulated at the light-guide region 5; a laser beam 14 is deflected at an angle thetafrom the edge face of a resonator toward the control electrode 10 and is then radiated. By this method, a high-speed scanning operation is possible as compared with a mechanical deflection and scanning operation of the laser beam.
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