| 摘要 |
PURPOSE:To improve reliability for a semiconductor device, by performing an electrically complete breakdown for a defective semiconductor pellet which is discovered in the midst of processes where many semiconductor pellets are formed in one lot from a semiconductor wafer. CONSTITUTION:In processes where many semiconductor pellets 2 are formed in one lot from a semiconductor wafer 1, when wafer checking is performed every processing and a detective semiconductor 2 is discovered in the midst of the process, a chuck table 3 is properly moved intermittently forward/ backward and rightward/leftward so as to dispose the defective semiconductor pellet 2 just below an electrode 4. Next, when a high voltage from a d-c power source 5 is applied to a space between the defective semiconductor pellet 2 and the electrode 4 so as to generate corona discharge and minute spark discharge and the like, the defective semiconductor pellet 2 is electrically and perfectly broken. This breakage of the defective semiconductor pellet has no effect on the ambient semiconductor pellets 2 and besides it does no damage to the surface of the semiconductor wafer 1.
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