| 摘要 |
PURPOSE:To improve high frequency characteristics by nonlinearly disposing a plurality of transistors and MOS capacitors to maintain the lengths of input wires from input leads to the respective capacitors and from the capacitors to the respective transistors constant to suppress a phase shift between transistor chips. CONSTITUTION:In a high frequency high output transistor having an enclosure 11 having input/output leads 6, 7, a plurality of transistor chips 1a-1c provided in the enclosure 11, and a plurality of MOS capacitors 5a-5c for converting impedances, the arrays of the chips 1a-1c and the capacitors 5a-5c are so linearly formed that the lengths of the input wirings from the leads 6 to the capacitors 5a-5c and the lengths of the wirings from the capacitors 5a-5c to the chips 1a + 1c respectively become constant. Thus, an irregularity of the chips at the time of RF operation is suppressed to improve the high frequency characteristics. |
