| 摘要 |
PURPOSE:To prevent the formation of a reaction product and a CVD film at a gas supply part by causing the gas supply part to have a prescribed temperature by means of a heating mechanism. CONSTITUTION:A wafer 3 is placed at a susceptor 2 located on a heater 1 and its heater permits the wafer 3 to have a prescribed temp. (normally 350-500 deg.C) that is required to form a CVD film. An SiO2 film is formed by supplying silane gas such as SiH4, and Si2H6 as well as O2 through a gas nozzle 4, thereby keeping the temp. of the wafer 3 at 450 deg.C. In such a case, when temperatures of the gas nozzle 4 and gas nozzle cover 6 are less than 150 deg.C, a reaction product is formed and when they are at higher than 330 deg.C, the CVD film is formed. Thus temperatures of the gas nozzle 4 as well as the gas nozzle cover 6 are set at 150-330 deg.C so as to avoid the formation of the above products.
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