| 摘要 |
PURPOSE:To continuously monitor the variation of a light irradiation intensity distribution at a plasma ion sheath having a close relation to the control factor of a film quality and a film forming velocity and its vicinity by providing a video camera in which a telescopic lens is mounted, an image processor and a personal computer. CONSTITUTION:A plasma CVD device monitor which can continuously observe the variation of a light irradiation intensity distribution at a plasma ion sheath formed in a plasma reactor and its vicinity is composed of a video camera 3 having a telescopic lens 2, an image processor 5 and a personal computer 6. An optical filter 1 which transmits a light of a specific wavelength is, for example, provided in the lens 2, Thus, even when the sudden condition change of a reaction system occurs, it can be rapidly returned to an optimized original plasma state, and the optimized plasma state is held to obtain a preferable film quality without decelerating a film growing velocity.
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