| 摘要 |
PURPOSE:To obtain a semiconductor device which provides excellent Schottky characteristics between a semiconductor layer and metal layers and is highly resistant against thermal and electrical stresses and has high stability and reliability by a method wherein the metal layers composed of nickel layers which are formed on both the main surfaces of the semiconductor layer and form Schottky junctions and aluminum layers formed on the nickel layers with nickel/aluminum alloy layers between are provided. CONSTITUTION:Al layers 22 are formed directly on Ni layers 21 which are formed on both the main surfaces of a semiconductor layer 1 by a vacuum evaporation method and form Schottky junctions with the semiconductor layer 1 and gate electrodes 2 composed of the Ni layers 21 and the Al layers 22 are formed and, further, by a heat treatment, Ni/Al alloy layers are formed in the junctions between the Ni layers 21 and the Al layers 22. With this constitution, as the vapor pressure of the Ni layer 21 is low, the layer can be evaporated easily and the Schottky junctions with excellent characteristics are provided between the Ni layers 21 and the semiconductor active layer 1 to realize the sufficient function as an FET and, moreover, as the Ni/Al alloy layers are provided between the Ni layers 21 and the Al layers, the gate electrodes 2 which are highly resistant against thermal and electrical stresses can be obtained.
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