| 摘要 |
PURPOSE:To enhance the performance of a semiconductor device by a method wherein the particle diameter at a capacitor electrode out of semiconductor layers is made smaller than the particle diameter at a wiring part so that the time constant for the semiconductor device can be made small and that the capacitance accuracy of a capacitor can be made high. CONSTITUTION:At a semiconductor device where at least one electrode 13 for a capacitor 11 and wiring parts 18, 19 are composed of semiconductor layers, the particle diameter at the electrode 13 out of said semiconductor layers is made smaller than the particle diameter at the wiring parts 18, 19. For example, one electrode 13 and the other electrode 14 for a capacitor 11 at an analog MOS IC chip are composed of polycrystalline Si layers 16 and an Al layer, respectively; in addition, a wiring part 10 which is connected to the electrode 13 and the gate electrode 19 for a MOS transistor 12 are composed of the polycrystalline Si layers 15. The particle diameter is made relatively big and the resistance value is made low at the wiring part 10 and the gate electrode 19 out of the polycrystalline Si layers 15; the particle diameter at the electrode 13 is made relatively small, and the unevenness at the interface to the dielectric 15 is made small. |
