| 摘要 |
PURPOSE:To obtain a thyristor which has the same function as a double-sided gate construction and can be produced by a process as simple as the process for producing a single-sided gate construction by a method wherein pairs of cathode regions and 1st gate regions and pairs of anode regions and 2nd gate regions are formed on the same surface of a semiconductor substrate. CONSTITUTION:N<+>type 2nd gate regions 3, 3... are formed on the main surface 1a of an N<->type silicon substrate 1 with a diffusion mask 2 made of SiO2 and, further, P<+>type 1st gate electrode 5, 5... are formed with a newly provided diffusion mask 4. An N<->type epitaxial layer 6 is formed on the main surface to bury the gate regions 5 and 3 in the substrate 1. Corresponding to the respective gate regions 5 and 3, N<+>type cathode regions 7 and P<+>type anode regions 8 are formed on the main surface and selective etching is carried out to form pairs of the cathode regions 7 and the 1st gate regions 5 and pairs of the anode regions 8 and the 2nd gate regions 3 into mesa shapes. In a final process, after trenches 9 are formed between the mesas, an SiO2 protective film 10 is formed on the main surface and metal electrodes 11-14 are formed on the respective regions of the anodes, cathodes and gates to complete a thyristor.
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