| 摘要 |
PURPOSE:To reduce a reverse leakage current by a method wherein a main electrode is formed on an oxide film formed on one of the main surfaces of a single-crystal silicon substrate and a rear electrode is formed on a main surface which is opposite to the main surface on which the main electrode is formed to constitute a MIS structure. CONSTITUTION:A main electrode 3 is formed on one of the main surfaces of a single- crystal silicon substrate 1 with an oxide film 6 between and a rear electrode 4 is formed on a main surface which is opposite to the main surface on which the main electrode is formed to constitute a MIS structure. When a positive voltage is applied to the metal side, the band is bent in accordance with the magnitude of the applied voltage. An actual leakage current is created when electrons and/or positive holes which exist above the conducting band EC and below the valence band EV respectively are transmitted into the metal side through the oxide film. However, as the energy barrier of the oxide film which is provided between the main surface of the single crystal silicon substrate 1 and the main electrode is extremely high, compared with the barrier of a P-N junction, electrons and positive holes can hardly transmitted. Therefore. almost no leakage current exists except a tunnel current and a displacement current.
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