| 摘要 |
PURPOSE:To shorten a peeling and removing process and improve the yield of a resist pattern by dissolving a metallic film which is placed below the resist pattern and is soluble in acid by using acid and simultaneously by removing its resist pattern that is formed on the metallic film after peeling it off. CONSTITUTION:An insulating film 12 is formed on a substrate 11. Ti 13 is thinly vaporized on the insulating film 12 and a resist pattern 14 is formed on Ti 13 and an ion implantation 15 is carried out with the resist pattern 14 as a mask. Then the resist pattern 14 becomes stiff by the ion implantation 15. As soon as the ion implantation is complete, Ti 13 is dissolved and removed with dissolving solutions such as HF or HCl/H2O2 and the like and simultaneously the resist pattern 14 placed on Ti 13 is removed. In such a case, if an HF thin solution (1% of HF) is used, a base insulating film 12 is washed at the same time.
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