发明名称 |
METHOD AND APPARATUS FOR LITHOGRAPHIC ROTATE AND REPEAT PROCESSING |
摘要 |
In X-ray lithography apparatus, a mask assembly (31,71) permits exposure of selected radial sectors (3, 5, 7, 9) of a semiconductor wafer (1). The mask assembly may comprise a single mask (31) having a single transmissive sector, sectors of the wafer (1) being exposed in turn by rotation of the wafer. The mask assembly may comprise a single mask (31) having a plurality of transmissive sectors, the wafer (1) being rotated relative to the mask (31) between successive exposures. When the mask assembly comprises a diaphragm having a single transmissive sector, the mask may be divided into a plurality of radial sectors each radial sector having a desired pattern thereon and the diaphragm can be rotated between successive exposures of the wafer. |
申请公布号 |
DE3563392(D1) |
申请公布日期 |
1988.07.21 |
申请号 |
DE19853563392 |
申请日期 |
1985.01.23 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
SIDDALL, GRAHAM J.;EATON, STEVEN GLEN;KRUGER, JAMES B.;GARRETTSON, GARRETT A.;NEUKERMANS, ARMAND P. |
分类号 |
H01L21/30;G03F1/16;G03F7/20;H01J37/305;H01L21/027;(IPC1-7):G03B41/00 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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