| 摘要 |
PURPOSE:To improve the reliability of a multilayer interconnection structure by forming an interlayer insulating film, then coating it with an organic film, etching back parts of the organic film and the insulating film, removing the remaining organic film, and again coating it with an interlayer insulating film to flatten the surface of the insulating film, thereby preventing the etching remainder of upper layer wirings from being generated. CONSTITUTION:When a semiconductor device having a multilayer interconnection structure is manufactured, an interlayer insulating film 3 is formed in a predetermined thickness by a CVD method on a surface including lower layer wirings 2 formed on the insulating film 1 of a semiconductor substrate, and the film 3 is coated with an organic film 4. Then, parts of the films 4, 3 are etched back, the film 4a remaining by the etchback is removed, and an interlayer insulating film 13 is formed by a CVD method in a predetermined thickness. For example, lower layer wirings 2 are formed on the film 1, and an SiO2 film 3 is grown. Then, it is so coated with a photoresist 4 that the surface is flattened. Thereafter, after the photoresist and the SiO2 film are etched back, the photoresist 4a is separated. Subsequently, the film 13 is grown to form a flattened interlayer insulating film 13.
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