| 摘要 |
PURPOSE:To activate an ion implanted region without varying the control value of a threshold voltage by activating by annealing the region in the state that a whole substrate surface is covered with a metal film containing the same ions as the ion seed of at least one of materials which constitute the substrate. CONSTITUTION:A first ion implanted region 14 is formed on a semi-insulating substrate 10, and the whole substrate 10 including the region 14 is covered with a metal film or a metal compound film 11. Thereafter, the ion seed of at least one of materials which constitute the substrate 10 is ion implanted into the film 11, and the region 14 is activated by annealing. For example. The substrate 10 is covered with the film 11 made of WSix, etc., and implanted with Si ions to form an ion implanted region 14. Further with an insulating film 15 as a mask Si ions are implanted to form source, drain high concentration regions 16, 17. Then, after As ions are implanted to the film 11, it is annealed to activate the Si ions.
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