| 摘要 |
PURPOSE:To avoid the damage of a wafer and the contamination of a reaction chamber, and to obtain a vapor growth thin film of high quality by charging a wafer into a preliminary chamber, then vacuum substituting the remaining gases in the preliminary chamber and the reaction chamber with inert gas, and then inserting the wafer into the reaction chamber. CONSTITUTION:After a wafer is conveyed into a preliminary chamber 14 provided separately from a reaction chamber 12, remaining gas in the chamber 14 is vacuum-substituted for inert gas to atmospheric air at room temperature, and vacuum-substituted with inert gas to atmospheric air at arbitrary temperature. After the separation is then released, the wafer is inserted from the chamber 14 to the chamber 12, the preliminary heating time of the wafer is elapsed after the chamber 12 is again separated in a hermetically sealing manner, and reactive gas is then fed into the chamber 13 to deposit a thin film. The reaction chamber 12 in which the reactive gas and inert gas can be selectively fed, the preliminary chamber 14 in which inert gas can be fed in a hermetically sealing manner from the chamber 12, an exhaust system 28 for exhausting the chambers 12, 14, and a wafer moving mechanism 18 are provided to construct an apparatus.
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