| 摘要 |
PURPOSE:To produce a thin film having satisfactory step coverage without damaging a substrate by specifying the relation between the length of the shortest path leading to a target at an arbitrary point on the substrate and the pressure of gas in a vacuum vessel. CONSTITUTION:When a thin film is formed by sputtering other than DC sputtering, the length L(cm) of the shortest path leading to a target through the space in a vacuum vessel at an arbitrary point on a substrate and the pressure (p)(Torr) of gas in the vacuum vessel are set so as to satisfy an inequality LXp>1. The rate of sputtering of the target is preferably regulated to >=1X10<-4> mol/min as a whole and the region of 20cm before the whole surface of the target is preferably made vacant. When sputtered particles collide against particles of a sputtering gas, they distribute the energy to the gas particles and are cooled by repeated collision. The movement direction is disordered immediately after sputtering and the numbers of particles reaching the top and bottom of a stepped part become nearly equal, so the step coverage of a formed film is improved.
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