发明名称 FORMATION OF THIN FILM
摘要 PURPOSE:To form a high quality thin film having high crystallinity by vaporizing a solid starting material by irradiation with laser beam, mixing the resulting vapor with a carrier gas, jetting the gaseous mixture into vacuum to produce high-speed neutral cluster beams and projecting the beams. CONSTITUTION:A solid starting material 12 is put in a supersonic nozzle 11 and laser beam 15 is converged and irradiates the surface of the starting material 12 through a converging lens 16 and a light introducing window 17. The locally heated starting material 12 vaporizes in a moment and the resulting vapor is mixed with a carrier gas 18. This gaseous mixture is jetted into vacuum from the small hole of the nozzle 11 by free expansion. At this time, the mixture is cooled because the internal energy is reduced by adiabatic expansion, so the vapor of the starting material 12 condenses and produces high-speed neutral cluster beams. The beams irradiate a substrate 13 to form a thin film. Thus, impurities are prevented from contaminating the thin film and a high purity thin film is obtd.
申请公布号 JPS63176463(A) 申请公布日期 1988.07.20
申请号 JP19870007589 申请日期 1987.01.16
申请人 NEC CORP 发明人 NISHIYAMA IWAO
分类号 C23C14/32 主分类号 C23C14/32
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