| 发明名称 |
PROCESS FOR MANUFACTURING A MOS INTEGRATED CIRCUIT EMPLOYING A METHOD OF FORMING REFRACTORY METAL SILICIDE AREAS |
| 摘要 |
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| 申请公布号 |
EP0139371(B1) |
申请公布日期 |
1988.07.20 |
| 申请号 |
EP19840305444 |
申请日期 |
1984.08.09 |
| 申请人 |
TEKTRONIX, INC. |
发明人 |
PARK, HEE KYUN;YAMAGUCHI, TADANORI |
| 分类号 |
H01L21/266;H01L27/088;H01L21/28;H01L21/76;H01L21/762;H01L21/763;H01L21/8234;H01L21/8238;H01L29/45;H01L29/49;H01L29/78;(IPC1-7):H01L21/76;H01L21/82;H01L21/31;H01L27/08 |
主分类号 |
H01L21/266 |
| 代理机构 |
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代理人 |
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| 主权项 |
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