发明名称 Sputtering process and an apparatus for carrying out the same.
摘要 <p>A sputtering process and an apparatus for carrying out the same for forming a film of a film forming material over the surface of a substrate (25). A target (5) formed of the film forming material is held on a sputtering electrode (4) receiving a voltage, and the substrate (25) is disposed at a predetermined distance and opposite to the target (5). A high-density plasma is produced by producing a cusp field between the target (5) and the substrate (25) and a bias voltage is applied to the surface of the substrate (25) to make ions of the high-density plasma fall on the surface of the substrate (25) in order to make the particles of the film forming material sputtered from the target deposit in a thin film over the surface of the substrate (25).</p>
申请公布号 EP0275021(A2) 申请公布日期 1988.07.20
申请号 EP19880100054 申请日期 1988.01.05
申请人 HITACHI, LTD. 发明人 TATEISHI, HIDEKI;SAITO, HIROSHI;SASAKI, SHINJI;HORIUCHI, MITSUAKI
分类号 C23C14/35;H01J37/32;H01J37/34 主分类号 C23C14/35
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