发明名称 |
Sputtering process and an apparatus for carrying out the same. |
摘要 |
<p>A sputtering process and an apparatus for carrying out the same for forming a film of a film forming material over the surface of a substrate (25). A target (5) formed of the film forming material is held on a sputtering electrode (4) receiving a voltage, and the substrate (25) is disposed at a predetermined distance and opposite to the target (5). A high-density plasma is produced by producing a cusp field between the target (5) and the substrate (25) and a bias voltage is applied to the surface of the substrate (25) to make ions of the high-density plasma fall on the surface of the substrate (25) in order to make the particles of the film forming material sputtered from the target deposit in a thin film over the surface of the substrate (25).</p> |
申请公布号 |
EP0275021(A2) |
申请公布日期 |
1988.07.20 |
申请号 |
EP19880100054 |
申请日期 |
1988.01.05 |
申请人 |
HITACHI, LTD. |
发明人 |
TATEISHI, HIDEKI;SAITO, HIROSHI;SASAKI, SHINJI;HORIUCHI, MITSUAKI |
分类号 |
C23C14/35;H01J37/32;H01J37/34 |
主分类号 |
C23C14/35 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|