| 摘要 |
PURPOSE:To obtain a single crystal having high quality in high yield, by putting two or more kinds of elements including an element having high vapor pressure into a crucible and controlling the baking condition by detecting the evaporation rate of the element having high vapor pressure. CONSTITUTION:Raw materials Ga 3, As 4 and a liquid encapsulant 5 (e.g. B2O3) are charged into a crucible 2 held in a pressure chamber 1, the space in the chamber 1 is evacuated and the crucible 2 is heated with a heater 6 keeping the evacuated state to effect vacuum baking. During the vacuum baking process, the baking condition is controlled by detecting the weight of the crucible with a lower weight sensor 8. When the reduction of weight reaches a prescribed level, the vacuum baking operation is finished and a prescribed pressure is applied to the chamber. The direct synthetic reaction of Ga and As is carried out in the chamber maintained under high pressure, the produced GaAs raw material is melted by heating with the heater 6 and a GaAs compound semiconductor single crystal is grown from the molten GaAs.
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