发明名称 |
Bilayer lithographic process. |
摘要 |
<p>A method for producing high resolution patterned resist images having excellent etch resistance and superior thermal and dimensional stability comprises the steps of: (a) forming a planarizing layer resistant to silicon uptake on a substrate, (b) providing a positive-working photoresist composition containing -OH or -NH- groups over the planarizing layer, (c) imagewise exposing the resist to activating radiation, (d) developing the exposed resist, (e) contacting the developed resist with a vapor comprising a silicon-containing compound to effect silylation thereof and thereby impart etch resistance, the silicon-containing compound having the structural formula: <CHEM> wherein X<1> and X<2> are individually chloro or <CHEM> wherein R<3> and R<4> are individually H or alkyl; and R<1> and R<2> are individually H or alkyl; and (f) contacting the planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof. d</p> |
申请公布号 |
EP0274757(A2) |
申请公布日期 |
1988.07.20 |
申请号 |
EP19870119415 |
申请日期 |
1987.12.31 |
申请人 |
EASTMAN KODAK COMPANY |
发明人 |
MCCOLGIN, WILLIAM CAREY C/O EASTMAN KODAK COMPANY;BRUST, THOMAS BROWNELL C/O EASTMAN KODAK COMPANY;DALY, ROBERT CURTIS C/O EASTMAN KODAK COMPANY;JECH, JOSEPH, JR. C/O EASTMAN KODAK COMPANY;LINDHOLM, ROBERT DERWOOD C/O EASTMAN KODAK COMPANY |
分类号 |
G03F1/00;G03F1/08;G03F7/039;G03F7/09;G03F7/11;G03F7/26;G03F7/40;H01L21/027 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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