| 摘要 |
The invention relates to a compact combiner for ultra-high frequency semiconductor devices, such as negative resistance diodes (Gunn - Impatt). The combiner according to the invention combines on a base: at least one semiconductor pellet or a plurality of semiconductor devices integrated into a single pellet at the center of the base, a first ring of capacitors as located elements, a second dielectric material ring metallized on two opposite planar faces, forming both a second capacitor and part of the encapsulation box of the combiner; and metal tapes ensuring the connections between the active components and the capacitors and simultaneously forming non-located element chokes. A metal cover welded to the outer ring seals the box and supplies the bias. The compact combiner may be used in applications of ultra-high frequency amplifiers and oscillators. |
