发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To obtain a circuit whose gain is variable without deteriorating the band by employing a variable resistor using an FET for a source resistance of a differential amplifier. CONSTITUTION:Input signals Vin, the inverse of Vin opposite in phase to each other are amplified by a differential amplifier comprising a transistor Q1(Q2) and outputted from terminals Vout, the inverse of Vout as a voltage drop across a load resistor RL. In this case, the power voltage is given between a terminal VDD and a terminal GND and a constant current source I is given. A gain variable device 4 employing an FET variable resistor in place of a source resistor RS1 is provided to vary the source resistance thereby controlling the gain. Thus, the variable gain amplifier is formed by using one set of differential pairs only.
申请公布号 JPS63175510(A) 申请公布日期 1988.07.19
申请号 JP19870005983 申请日期 1987.01.16
申请人 HITACHI LTD 发明人 KINOSHITA TAIZO;TANAKA SATOSHI;KODERA NOBUO;TANAKA HIRONORI;NAGATA MINORU
分类号 H03G3/10;H03F3/45 主分类号 H03G3/10
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