发明名称 Output buffer with improved di/dt
摘要 An integrated circuit comprises a chip containing electric circuits in a package with leads. The chip receives power via the leads. The leads have inductance so that when there is a change in current flow (di/dt) through a lead there is a voltage which is developed between the end of the lead and the chip which can cause the chip to either malfunction or function poorly. The highest di/dt is generally caused by an output buffer that changes the logic state of its output. The typical output buffer has a pair of driver transistors that provide one of a logic high or logic low. The di/dt generated by these transistors is controlled by controlling the voltage on the gate of the transistor which is providing the particular logic state. This control reduces di/dt from that typically provided at the very beginning of a logic state transition but increases it over that typically provided immediately thereafter for the purpose of optimizing logic state transition speed for a given maximum di/dt.
申请公布号 US4758743(A) 申请公布日期 1988.07.19
申请号 US19860911702 申请日期 1986.09.26
申请人 MOTOROLA, INC. 发明人 DEHGANPOUR, SAM;PELLEY, III, PERRY H.
分类号 H03K17/16;H03K19/003;(IPC1-7):H03K17/04;H03K17/12;H03K17/284;H03K17/687 主分类号 H03K17/16
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