SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To realize a high-speed access time and to avoid a wrong writing action by using a connection logic circuit inputting a control signal supplied from the outside at an ECL level. CONSTITUTION:A memory cell array M-ARY contains memory cells including a MOSFET arranged in a grid form. A memory peripheral circuit contains a bipolar MOSFET and a complementary MOSFET. A timing control circuit TC which generates a prescribed internal control signal without converting a prescribed control signal supplied from the outside at a TTL level or the ECL level into a signal level of the MOSFET. In such constitution, a prescribed internal control signal is produced with no intervention of a level converting circuit having a comparatively large delay time. Thus the access time is obtained at a high speed for a bipolar CMOS type RAM and at the same time a wrong writing action caused by sharing an input/output terminal can be avoided.