| 摘要 |
PURPOSE:To form single crystalline thin films aligned in the same azimuth on a whole substrate surface by simultaneously generating many lamellas in a short length to form the gathered state of single crystal regions with the lamellas as seed. CONSTITUTION:When a semiconductor layer 3 on an insulator 1 is irradiated with an energy beam to melt it, lamellas 8 are generated at the valley 6a of a temperature distribution 6, and formed along grooves 2. That is, the lamellas 8 of predetermined length are generated simultaneously at the valleys 6a of the temperature distribution at this time. Since the vicinity regions of the lamellas are recrystallized with the lamellas 8 as seed, the gathered state of single crystal regions 9 with the lamellas 8 as the seed is formed. Thus, single crystalline thin films 10 aligned in the same azimuth are formed on the whole substrate surface.
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