| 发明名称 |
Contact etch method |
| 摘要 |
A method for patterning small-geometry contacts with sloped sidewalls in integrated circuit fabrication. A multilayer resist process is used, and the spacer layer is undercut by overexposure and overdevelopment at the pattern transfer stage. This provides a cantilever etch mask structure, without the need to use any hardmask layers.
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| 申请公布号 |
US4758305(A) |
申请公布日期 |
1988.07.19 |
| 申请号 |
US19860838965 |
申请日期 |
1986.03.11 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BONIFIELD, THOMAS D.;MARRIOTT, VIC B.;JUCHA, RHETT B.;DOUGLAS, MONTE A. |
| 分类号 |
H01L21/28;H01L21/027;H01L21/302;H01L21/3065;H01L21/311;H01L21/768;H01L21/8234;H01L27/088;(IPC1-7):B44C1/22;B29C37/00;C03C15/00;C03C25/06 |
主分类号 |
H01L21/28 |
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