发明名称 METALLIC ION SOURCE
摘要 PURPOSE:To stably obtain large-current metallic ion beams by utilizing a magnetic field for microwave discharge and an electric field for sputtering so as to lock electrons in a plasma generation chamber and filling a magnetic pole with a target material. CONSTITUTION:Microwaves generated in a microwave power source 14 are made to pass through a waveguide path 15 and supplied to a microwave emitter 16 in a discharge chamber 11 and radiated inside a discharge chamber 11. Magnetic circuitry is formed by a magnetic coil 17 so as to apply a magnetic field to the discharge chamber 11. When Ar gases, for example, for discharge maintenance are introduced from an ion seed introduction port 12, a reaction of the microwaves to the magnetic field enables the generation of high density plasma under low gaseous pressure and low microwave power. Ions in the plasma are diffused outside the discharge chamber 11 through an ion introduction port 13, and they are radiated in the X direction by an electric field which is formed on an ion drawing electrode 19 having slit-shaped holes and generated by an ion acceleration power source 18. When a negative potential is applied to targets 23, ions impinge on the targets 23.
申请公布号 JPS63175319(A) 申请公布日期 1988.07.19
申请号 JP19870008491 申请日期 1987.01.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YOSHIDA ZENICHI
分类号 H01J27/08;H01J27/16;H01J27/22;H01J37/08 主分类号 H01J27/08
代理机构 代理人
主权项
地址