| 摘要 |
PURPOSE:To improve the bondability of a resist to a wafer and the dry etching resistance by holding the resist after developing in a reduced pressure atmosphere for a suitable time. CONSTITUTION:A thermal oxide film 2 is grown on a silicon substrate 1, further coated with a positive type resist 3, and the resist 3 is exposed to the pattern of a mask 4 having, for example, 50% of porosity and developed. It is held in a reduced pressure atmosphere in a vacuum vessel immediately after it is developed. Since moisture and volatile component contained in the resist are removed by exhausting by means of the vacuum, the bondability to the wafer is improved, the volatile component is not generated during dry etching to improve the dry etching resistance. Setting with good reproducibility is performed irrespective of the material and the film thickness of the resist. |
