| 摘要 |
A sense amplifier for a programmable read only memory having a sense current source circuit for supplying memory cells in the memory with currents. The sense current source circuit is adapted to supply memory cells with a cell current for both a regular reading and a verify reading. A reference value of the cell current for the regular reading is selected to be higher than a reference value of the cell current for the verify reading, whereby a sufficient value of margin of voltage of a power source for the memory is ensured.
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