| 摘要 |
PURPOSE:To make it possible to form GaAs films having an excellent crystallizability on an insulating substrate by a method wherein an insulator intermediate layer is provided on the single crystal substrate consisting of a metal and moreover, the P-type and N-type GaAs films are provided on its upper part. CONSTITUTION:An insulative fluoride film 2 is formed on a single crystal metal plate 1 consisting of such a metal as Fe, Ni, Al, Cu, Co and Cr, which can be matched with fluoride with respect to the thermal expansion coefficient to obtain a substrate. Thereby, the warpage of the substrate is prevented and the defect in the film 2 is eliminated to form GaAs films 3 and 5 having an excellent crystallizability thereon. The dielectric strength of fluoride is 10<5>V/m or more, the fluoride has sufficiently insulating properties and a strong orienta tion property, the single crystal fluoride film 2 is obtained on the single crystal metal plate 1 and moreover, the single crystal GaAs films 3 and 5 are easily grown on the film 2. |
