| 摘要 |
PURPOSE:To perform a high speed operation and to eliminate the disconnection of wiring conductors by thickly setting the thickness of a second insulating film, and uniformly forming the thickness of all second layer wiring conductors, thereby reducing a parasitic capacity. CONSTITUTION:The whole surface of a semiconductor substrate 1 is covered with a first metal film 2, a first insulating film 3 is formed on the top of the film 2, a through hole 4 is formed at the film 3, and the top of the film 3 is then covered with a second metal film 5. Then, the film 5 insularly remains on the hole 4, the film 2 is selectively removed by etching to form first layer wiring conductors 2 including a part contacted with the film 5. After a second insulating film 6 is formed on the whole substrate 1 over the films 2, 5, second wiring conductors 7 with the third metal film covered on the film 5 is formed by exposing on the film 5 to electrically connect the conductors 2, 7 through the film 5.
|
