发明名称 |
DUNNE-LAAGSCHAKELINGEN, WEERSTANDEN EN CONDENSATOREN, DIE EEN ALUMINIUM-TANTAALLAAG BEVATTEN. |
摘要 |
<p>Al-Ta alloy films containing 2 to 20 atomic % of Ta in Al exhibit an improved temperature stability. An Al-alloy film containing 7 atomic % of Ta has a resistivity of 60 mu OMEGA cm, a temperature coefficient of resistance of +100 ppm DEG /K and a sparking potential of about 400 V when anodizing in 0.1% H3PO4. An Al-alloy film containing 15 atomic % of Ta has a specific resistance of 200 mu OMEGA cm, a temperature coefficient of resistance of -100 ppm DEG /K and a sparking potential of about 300 V when anodizing in 0.1% H3PO4. The alloy films are applied on a non-conductive substrate, as by RF-cathode sputtering in a desired thickness and are useful for thin-film circuits, discrete resistors, capacitors, etc.</p> |
申请公布号 |
NL183111(C) |
申请公布日期 |
1988.07.18 |
申请号 |
NL19730011843 |
申请日期 |
1973.08.28 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT TE BERLIJN EN MUENCHEN, BONDSREPUBLIEK DUITSLAND. |
发明人 |
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分类号 |
C22C21/00;H01B1/02;H01C7/00;H01C7/06;H01C17/06;H01C17/08;H01G4/008;H01G4/40;H01L27/01;H01L49/02;H05K3/10;(IPC1-7):H01B5/14;H01G9/05 |
主分类号 |
C22C21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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