| 摘要 |
PURPOSE:To prevent disconnection of an aluminum interconnection, by covering the surface of the aluminum interconnection with an aluminum nitride film. CONSTITUTION:Aluminum interconnection 104-1, 104-2 are formed on an interlayer insulation film 103 on a semiconductor substrate 101. The surface of the aluminum interconnection is modified to aluminum nitride films 105-1, 105-2 by a plasma heat nitrization within ammonium gas (mixture of N2 and H2 gases). Then, a passivation film 106 is formed. Disconnection of the interconnection due to electromigration can be reduced. Further, the interconnection 104 can be prevented from being corroded by impurities such as halogen compounds or oxygen molecules from the passivation film 106.
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