| 摘要 |
PURPOSE:To perform a doping having high uniformity and high concentration controllability by supplying a first gas species containing a group III constituent element: A, and thereafter supplying a second gas species containing a group II constituent element: B becoming a P-type impurity. CONSTITUTION:Vapor phase growth is made by alternately repeating the supply of a gas species containing a group III constituent element and a gas species containing a group V constituent element. At that time, after supplying a first gas species containing a group III constituent element: A, a second gas species containing a group II continuent element: B which is to become a P-type impurity is supplied. Whereupon, part of the group III element: A supplied by the first gas species is replaced with the group II element: B supplied by the second gas species. With this a doping having high uniformity and high concentration controllability is performed.
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