发明名称 VAPOR PHASE EPITAXIAL GROWTH APPARATUS
摘要 PURPOSE:To obtain a high-quality epitaxial crystal by providing a means for distilling and purifying mercury in the middle of the path between a reaction vessel and a mercury vessel communicating with the reaction vessel and containing the liquified unreacted mercury, thereby removing the impurities in the mercury. CONSTITUTION:In the middle of the path between a reaction vessel for forming an epitaxial layer and a mercury containing vessel 2 communicating with the reaction vessel and containing the liquified unreacted mercury, a distillation equipment 101 for purifying mercury is provided. The equipment 101 consists of a container vessel 21, a condenser 22 and a vessel 23 for containing mercury. And the mercury liquified in the device for forming a epitaxial layer is supplied through an opening part 24 of a connecting pipe 2A into the vessel 21. The mercury is saved in a mercury reservoir 26 by a supply valve 25. The mercury is further supplied to a heating part 32 in the bottom of the condenser 22, and heated by a heater 28, becoming a vapor of mercury. The vapor of mercury, after cooled and liquified in a cooling part 29, is contained in the vessel 23. With this, the impurities in the mercury are removed, whereby a high-quality epitaxial crystal is obtained.
申请公布号 JPS63174312(A) 申请公布日期 1988.07.18
申请号 JP19870006333 申请日期 1987.01.14
申请人 FUJITSU LTD 发明人 MARUYAMA KENJI
分类号 H01L21/205 主分类号 H01L21/205
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