| 摘要 |
PURPOSE:To prevent the generation of a bird's beak by forming a recessed groove in an element forming region on the surface of an insulating film deposited on a substrate and by forming the single crystal semiconductor element forming region deposited on the insulating film thicker than the other region. CONSTITUTION:After an SiO2 film 12 on which a groove 13 is formed is formed on a single crystal Si substrate 11 and a polycrystalline Si film 14 is formed on the SiO2 film 12, the film 14 is melted by irradiating an electron beam and recrystallized and a single crystal Si film 14' is formed. In this case, the Si film near an element forming region flows over the groove 13 and the thickness of the film 14' in the element forming region is made thicker. Then, an Si3N4 film 17 is formed in the element forming region and a field oxide film 18 is formed by oxidizing the film 14' using the film 17 as a mask. In this case, a bird's beak is not extended to the element forming region since the thickness of the single crystal Si film except the element forming region where the film 18 is to be formed is thinner. Then, the film 17 is removed and a gate oxide film 19, a gate electrode 20, a source region 21, a drain region 22, an Al wiring 24, etc., are formed.
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