| 摘要 |
PURPOSE:To constitute a high sensitivity photosensor on the same chip as a circuit element using the long wavelength light such as infrared rays and the like by a method wherein the substrate of an IC is brought into the state of high specific resistance, and the lower part of a circuit element part is isolated by a high density p+ layer. CONSTITUTION:The p<+> type diffusion layer 2B, to be used for isolation of the lower part of the n<-> type epitaxially grown layer 5b of the related circuit element forming part of the B-region, is formed on the p<-> type substrate 1 having high specific resistance. In the photosensor of the part A, the light projected from a light-receiving part 10 is a long wavelength light, and even when a pair of electrons and holes are generated in the substrate 1 on the deep position from the silicon surface, the recombination of electrons becomes small, because said p<-> type specific resistance is high. As a result, the ultimate efficiency on the n<-> type epitaxial layer 5a can be improved, and a number of photoelectric currents can also be picked out. |
