| 摘要 |
PURPOSE:To make the level of photoelement almost flush with that of a transistor by a method wherein a high resistant semiconductor layer is buried in a part of photoelement layer formed on a flat semiinsulating semiconductor substrate to form a transistor on the high resistant buried layer. CONSTITUTION:A contact layer 11, an absorption layer 12 and a window layer 13 are successively grown on a semiinsulating semiconductor substrate 10 comprising flat Fe doped InP. First, the window layer 13, the absorption layer 12 and the contact layer 11 are selectively removed using an SiO2 film as a mask to form a mesa part. Second, a high resistant buried layer 14, a channel layer 15 and an FET 16 are successively grown. Third, Zn is selectively diffused from the surface of window layer 13 to form a P type inversion region 17. Fourth, the FET layer 10 and the channel layer 15 are selectively etched away to section a junction type FET forming region. Finally, the window layer 13 and the absorption layer 12 are selectively etched for making a recess to form an N side electrode 19 of a PIN photodiode. |
